Part Details for 2SK2180 by Shindengen Electronic Manufacturing Co Ltd
Overview of 2SK2180 by Shindengen Electronic Manufacturing Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SK2180
2SK2180 CAD Models
2SK2180 Part Data Attributes:
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2SK2180
Shindengen Electronic Manufacturing Co Ltd
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Datasheet
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2SK2180
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 3A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 2.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 40 W | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 90 ns | |
Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for 2SK2180
This table gives cross-reference parts and alternative options found for 2SK2180. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2180, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK3415LS | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK2180 vs 2SK3415LS |
2SK672 | TRANSISTOR 10 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | 2SK2180 vs 2SK672 |
2SK1257 | Power Field-Effect Transistor, 40A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(A), 3 PIN | Panasonic Electronic Components | 2SK2180 vs 2SK1257 |
2SK3888-01MR | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fuji Electric Co Ltd | 2SK2180 vs 2SK3888-01MR |
2SK1352 | TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK2180 vs 2SK1352 |
2SK2340 | Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220E, 3 PIN | Panasonic Electronic Components | 2SK2180 vs 2SK2340 |
SML5020BVR | 26A, 0.2ohm, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | 2SK2180 vs SML5020BVR |
2SK1997 | TRANSISTOR 36 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK2180 vs 2SK1997 |
2SK1457 | Power Field-Effect Transistor, 5A I(D), 900V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN | SANYO Electric Co Ltd | 2SK2180 vs 2SK1457 |
2SK1539 | Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK2180 vs 2SK1539 |