Part Details for 2SK2173(F) by Toshiba America Electronic Components
Overview of 2SK2173(F) by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LM2917MX/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 | |
LM2907MX/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 | |
LM2917M/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 |
Price & Stock for 2SK2173(F)
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
C1S751200820803
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Chip1Stop | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-3PN RoHS: Compliant | 280 |
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$9.4500 / $11.7000 | Buy Now |
Part Details for 2SK2173(F)
2SK2173(F) CAD Models
2SK2173(F) Part Data Attributes
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2SK2173(F)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SK2173(F)
Toshiba America Electronic Components
MOSFET N-CH 60V 50A 2-16C1B
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 683 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 550 pF | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |