Datasheets
2SK2078 by: Toshiba America Electronic Components

TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power

Part Details for 2SK2078 by Toshiba America Electronic Components

Overview of 2SK2078 by Toshiba America Electronic Components

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Applications Automotive

Price & Stock for 2SK2078

Part # Distributor Description Stock Price Buy
Bristol Electronics   20
RFQ
ComSIT USA HIGH VOLTAGE MOSFET Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Europe - 149
RFQ

Part Details for 2SK2078

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2SK2078 Part Data Attributes:

2SK2078 Toshiba America Electronic Components
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2SK2078 Toshiba America Electronic Components TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code TO-3PN
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2078

This table gives cross-reference parts and alternative options found for 2SK2078. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2078, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STW9NA80 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics 2SK2078 vs STW9NA80
SSH12N80 Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor 2SK2078 vs SSH12N80
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Siemens 2SK2078 vs BUZ305
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Infineon Technologies AG 2SK2078 vs BUZ305
Part Number Description Manufacturer Compare
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Siemens 2SK2078 vs BUZ305
FS14UM-10 14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Renesas Electronics Corporation 2SK2078 vs FS14UM-10
STW9NA80 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics 2SK2078 vs STW9NA80
FS10SM-16A Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Powerex Power Semiconductors 2SK2078 vs FS10SM-16A
FS14UM-10 Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Powerex Power Semiconductors 2SK2078 vs FS14UM-10
SSH17N60A Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor 2SK2078 vs SSH17N60A
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Infineon Technologies AG 2SK2078 vs BUZ305
SSH12N80 Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor 2SK2078 vs SSH12N80
2SK2607 TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 2SK2078 vs 2SK2607

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