Part Details for 2SK2010 by SANYO Semiconductor Co Ltd
Overview of 2SK2010 by SANYO Semiconductor Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Price & Stock for 2SK2010
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | 4A, 250V, 0.7ohm, N-Channel MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 89 |
|
$0.9180 / $1.0800 | Buy Now |
Part Details for 2SK2010
2SK2010 CAD Models
2SK2010 Part Data Attributes
|
|
2SK2010
SANYO Semiconductor Co Ltd
Buy Now
Datasheet
|
Compare Parts:
2SK2010
SANYO Semiconductor Co Ltd
Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SANYO SEMICONDUCTOR CO LTD | |
| Part Package Code | TO-220ML | |
| Package Description | TO-220ML, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Sanyo | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK2010
This table gives cross-reference parts and alternative options found for 2SK2010. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2010, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2703 | Power Field-Effect Transistor, 10A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FM100, TO-3PF, 3 PIN | Sanken Electric Co Ltd | 2SK2010 vs 2SK2703 |
| 2SK1459LS | Power Field-Effect Transistor, 2.5A I(D), 900V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK2010 vs 2SK1459LS |
| 2SK4194LS | Power Field-Effect Transistor, 6A I(D), 450V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Semiconductor Co Ltd | 2SK2010 vs 2SK4194LS |
| 2SK4179 | Power Field-Effect Transistor, 80A I(D), 75V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | 2SK2010 vs 2SK4179 |
| 2SK4196LS | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK2010 vs 2SK4196LS |
| IXTQ470P2 | Power Field-Effect Transistor, | Littelfuse Inc | 2SK2010 vs IXTQ470P2 |
| 2SK1723 | TRANSISTOR 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK2010 vs 2SK1723 |
| APT5020BVR | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK2010 vs APT5020BVR |
| 2SK2404 | Power Field-Effect Transistor, 5A I(D), 450V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | 2SK2010 vs 2SK2404 |
| 2SK1250 | Power Field-Effect Transistor, 20A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK2010 vs 2SK1250 |