There are no models available for this part yet.
Overview of 2SK1697EYTL-E by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK1697EYTL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 0.5A 1700Mohm Upak/Sc-62 |
Price & Stock for 2SK1697EYTL-E by Renesas Electronics Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
C1S620200171896
|
Chip1Stop | Trans MOSFET N-CH Si 60V 0.5A 4-Pin(3+Tab) UPAK T/R RoHS: Compliant pbFree: Yes | 4930 |
|
$2.1100 / $2.9000 | Buy Now |
CAD Models for 2SK1697EYTL-E by Renesas Electronics Corporation
Part Data Attributes for 2SK1697EYTL-E by Renesas Electronics Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
Part Package Code
|
UPAK
|
Package Description
|
SMALL OUTLINE, R-PSSO-F3
|
Pin Count
|
4
|
Manufacturer Package Code
|
PLZZ0004CA
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Date Of Intro
|
1997-08-01
|
Samacsys Manufacturer
|
Renesas Electronics
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
0.5 A
|
Drain-source On Resistance-Max
|
2.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSSO-F3
|
JESD-609 Code
|
e6
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
1 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN BISMUTH
|
Terminal Form
|
FLAT
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
20
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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