Part Details for 2SK1406 by Panasonic Electronic Components
Results Overview of 2SK1406 by Panasonic Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SK1406 Information
2SK1406 by Panasonic Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SK1406
2SK1406 CAD Models
2SK1406 Part Data Attributes
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2SK1406
Panasonic Electronic Components
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Datasheet
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2SK1406
Panasonic Electronic Components
Power Field-Effect Transistor, 20A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TOP3, FULL PACK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANASONIC CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK1406
This table gives cross-reference parts and alternative options found for 2SK1406. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1406, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SK1426 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PBL, 3 PIN | 2SK1406 vs 2SK1426 |
| 2SK1745 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | 2SK1406 vs 2SK1745 |
| 2SK2042 | ROHM Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2SK1406 vs 2SK2042 |
| 2SK3522-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | 2SK1406 vs 2SK3522-01 |
| 2SK2161 | SANYO Semiconductor Co Ltd | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | 2SK1406 vs 2SK2161 |
| APT20M36SFLLG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | 2SK1406 vs APT20M36SFLLG |
| IRFW720A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 2SK1406 vs IRFW720A |
| 2SK1998 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 45 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | 2SK1406 vs 2SK1998 |
| 2SK3525-01MR | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 2SK1406 vs 2SK3525-01MR |
| 2SK1723 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | 2SK1406 vs 2SK1723 |