Datasheets
2SK1400 by:

Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB

Part Details for 2SK1400 by Hitachi Ltd

Overview of 2SK1400 by Hitachi Ltd

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Applications Smart Cities Energy and Power Systems Renewable Energy

Part Details for 2SK1400

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2SK1400 Part Data Attributes:

2SK1400 Hitachi Ltd
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2SK1400 Hitachi Ltd Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Alternate Parts for 2SK1400

This table gives cross-reference parts and alternative options found for 2SK1400. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1400, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1400 7A, 300V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation 2SK1400 vs 2SK1400
Part Number Description Manufacturer Compare
2SK1400 7A, 300V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation 2SK1400 vs 2SK1400
2SK1810 Power Field-Effect Transistor, 10A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd 2SK1400 vs 2SK1810
FQP5N30 Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation 2SK1400 vs FQP5N30
FS10UM-6 Power Field-Effect Transistor, 10A I(D), 300V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Powerex Power Semiconductors 2SK1400 vs FS10UM-6
FS10UM-6 Power Field-Effect Transistor, 10A I(D), 300V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Mitsubishi Electric 2SK1400 vs FS10UM-6
STP7NK30Z 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics 2SK1400 vs STP7NK30Z
FQP5N30 5.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC 2SK1400 vs FQP5N30
STP7NB30 7A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics 2SK1400 vs STP7NB30

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