Datasheets
2SK1329-E by: Renesas Electronics Corporation

Silicon N Channel MOSFET, TO-3PFM, /Tube

Part Details for 2SK1329-E by Renesas Electronics Corporation

Results Overview of 2SK1329-E by Renesas Electronics Corporation

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2SK1329-E Information

2SK1329-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
2SK1329-E Renesas Electronics Corporation Silicon N Channel MOSFET

Part Details for 2SK1329-E

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2SK1329-E Part Data Attributes

2SK1329-E Renesas Electronics Corporation
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2SK1329-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PFM, /Tube
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP
Part Package Code TO-3PFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code PRSS0003ZA
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON