Datasheets
2SK1307-E by: Renesas Electronics Corporation

20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN

Part Details for 2SK1307-E by Renesas Electronics Corporation

Results Overview of 2SK1307-E by Renesas Electronics Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

2SK1307-E Information

2SK1307-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2SK1307-E

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2SK1307-E Part Data Attributes

2SK1307-E Renesas Electronics Corporation
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2SK1307-E Renesas Electronics Corporation 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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