Datasheets
2SK1159 by:

8A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

Part Details for 2SK1159 by Renesas Electronics Corporation

Overview of 2SK1159 by Renesas Electronics Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Space Technology Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Energy and Power Systems Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Motor control systems Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

Part Details for 2SK1159

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2SK1159 Part Data Attributes:

2SK1159 Renesas Electronics Corporation
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2SK1159 Renesas Electronics Corporation 8A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK1159

This table gives cross-reference parts and alternative options found for 2SK1159. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1159, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1159 Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB Hitachi Ltd 2SK1159 vs 2SK1159
Part Number Description Manufacturer Compare
FS10SM-18A Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric 2SK1159 vs FS10SM-18A
MTW20N50E 20A, 500V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN onsemi 2SK1159 vs MTW20N50E
SSH22N50 Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor 2SK1159 vs SSH22N50
SSH20N50 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor 2SK1159 vs SSH20N50
2SK2057 TRANSISTOR 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 2SK1159 vs 2SK2057
2SK1159 Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB Hitachi Ltd 2SK1159 vs 2SK1159

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