Part Details for 2SK1159 by Renesas Electronics Corporation
Overview of 2SK1159 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Motor control systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Part Details for 2SK1159
2SK1159 CAD Models
2SK1159 Part Data Attributes
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2SK1159
Renesas Electronics Corporation
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Datasheet
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2SK1159
Renesas Electronics Corporation
8A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK1159
This table gives cross-reference parts and alternative options found for 2SK1159. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1159, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STW20NB50 | 20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | 2SK1159 vs STW20NB50 |
2SK1159 | Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB | Hitachi Ltd | 2SK1159 vs 2SK1159 |
SSH22N50 | Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK1159 vs SSH22N50 |
FS10SM-18A | Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Powerex Power Semiconductors | 2SK1159 vs FS10SM-18A |