Part Details for 2SK1157-E by Renesas Electronics Corporation
Overview of 2SK1157-E by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK1157-E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-2SK1157-E-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 56 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
339 In Stock |
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$5.4500 | Buy Now |
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Rochester Electronics | 2SK1157 - Power Field-Effect Transistor, 7A, 450V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 339 |
|
$4.6800 / $5.5100 | Buy Now |
Part Details for 2SK1157-E
2SK1157-E CAD Models
2SK1157-E Part Data Attributes:
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2SK1157-E
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
2SK1157-E
Renesas Electronics Corporation
Silicon N Channel MOSFET, TO-220AB, /Tube
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
Part Package Code | TO-220AB | |
Package Description | SC-46, 3 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | PRSS0004AC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK1157-E
This table gives cross-reference parts and alternative options found for 2SK1157-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1157-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK1157 | Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB | Hitachi Ltd | 2SK1157-E vs 2SK1157 |