Part Details for 2SK1119 by Toshiba America Electronic Components
Overview of 2SK1119 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2SK1119
2SK1119 CAD Models
2SK1119 Part Data Attributes:
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2SK1119
Toshiba America Electronic Components
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Datasheet
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2SK1119
Toshiba America Electronic Components
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, 2-10P1B, SC-46, 3 PIN, FET General Purpose Power
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Rohs Code | No | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 3.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK1119
This table gives cross-reference parts and alternative options found for 2SK1119. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1119, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFP4N100 | 4.3A, 1000V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | 2SK1119 vs RFP4N100 |
MTB3N100E | 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET | onsemi | 2SK1119 vs MTB3N100E |
RFP4N100 | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | 2SK1119 vs RFP4N100 |
RFP4N100 | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | 2SK1119 vs RFP4N100 |
MTP3N100E | 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | 2SK1119 vs MTP3N100E |
MTP3N100E | 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | 2SK1119 vs MTP3N100E |