Part Details for 2SK1101-01MR by Fuji Electric Co Ltd
Overview of 2SK1101-01MR by Fuji Electric Co Ltd
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Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Part Details for 2SK1101-01MR
2SK1101-01MR CAD Models
2SK1101-01MR Part Data Attributes:
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2SK1101-01MR
Fuji Electric Co Ltd
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2SK1101-01MR
Fuji Electric Co Ltd
Power Field-Effect Transistor, 10A I(D), 450V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220F15 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.65 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |