Part Details for 2SK1016-01 by Fuji Electric Co Ltd
Overview of 2SK1016-01 by Fuji Electric Co Ltd
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK1016-01
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 62 |
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$2.0576 / $3.0864 | Buy Now | |
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Quest Components | 3483 |
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$1.9290 / $3.8580 | Buy Now |
Part Details for 2SK1016-01
2SK1016-01 CAD Models
2SK1016-01 Part Data Attributes:
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2SK1016-01
Fuji Electric Co Ltd
Buy Now
Datasheet
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Compare Parts:
2SK1016-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 15A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK1016-01
This table gives cross-reference parts and alternative options found for 2SK1016-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1016-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP452 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK1016-01 vs IRFP452 |
| BUZ330 | Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Infineon Technologies AG | 2SK1016-01 vs BUZ330 |
| STW14NB50 | 14A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | 2SK1016-01 vs STW14NB50 |
| IRFP452 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | 2SK1016-01 vs IRFP452 |
| IRFP452 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | 2SK1016-01 vs IRFP452 |
| 2SK694 | TRANSISTOR 12 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK1016-01 vs 2SK694 |
| IRFP453 | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | 2SK1016-01 vs IRFP453 |
| IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | 2SK1016-01 vs IRFP453 |
| IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK1016-01 vs IRFP453 |
| BUZ384 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Siemens | 2SK1016-01 vs BUZ384 |