Datasheets
2SK1014-01 by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 12A I(D), 500V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for 2SK1014-01 by Fuji Electric Co Ltd

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2SK1014-01 Part Data Attributes:

2SK1014-01 Fuji Electric Co Ltd
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2SK1014-01 Fuji Electric Co Ltd Power Field-Effect Transistor, 12A I(D), 500V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Part Package Code TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.74 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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