Part Details for 2SJ412 by Toshiba America Electronic Components
Overview of 2SJ412 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SJ412
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 0.32 ohm, POWER, FET | 3 |
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$2.9223 / $3.8964 | Buy Now |
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Chip1Cloud | P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) / Trans MOSFET P-CH Si 100V 16A 3-Pin(3+Tab) TO-220FL | 4600 |
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RFQ |
Part Details for 2SJ412
2SJ412 CAD Models
2SJ412 Part Data Attributes:
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2SJ412
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SJ412
Toshiba America Electronic Components
TRANSISTOR 0.32 ohm, POWER, FET, 2-10S1B, 3 PIN, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 292 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.32 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SJ412
This table gives cross-reference parts and alternative options found for 2SJ412. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ412, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9530STRRPBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | 2SJ412 vs IRF9530STRRPBF |
IRF9530STRL | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | 2SJ412 vs IRF9530STRL |
IRFP9142 | Power Field-Effect Transistor, 15A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SJ412 vs IRFP9142 |
IRF9530STRRPBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SJ412 vs IRF9530STRRPBF |
IRF9530STR | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SJ412 vs IRF9530STR |
IRF9530STRR | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SJ412 vs IRF9530STRR |
IRFP9142 | Power Field-Effect Transistor, 16A I(D), 100V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | 2SJ412 vs IRFP9142 |
IRF9530STRRPBF | TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | 2SJ412 vs IRF9530STRRPBF |
IRF9530SPBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | 2SJ412 vs IRF9530SPBF |
IRF9630STRLPBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SJ412 vs IRF9630STRLPBF |