Part Details for 2SJ378 by Toshiba America Electronic Components
Overview of 2SJ378 by Toshiba America Electronic Components
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for 2SJ378
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | MOSFET Transistor, P-Channel, SIP | 51 |
|
$1.8502 / $3.3640 | Buy Now |
|
Chip1Cloud | P CHANNEL MOS TYPE (HIGH CURRENT SWITCHING, RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) / Trans MOSFET P-CH Si 60V 5A 3-Pin TPS | 8700 |
|
RFQ |
Part Details for 2SJ378
2SJ378 CAD Models
2SJ378 Part Data Attributes
|
2SJ378
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
2SJ378
Toshiba America Electronic Components
TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-8M1B, 3 PIN, FET General Purpose Power
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 273 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |