Datasheets
2SJ360(TE12L,F) by: Toshiba America Electronic Components

MOSFET P-CH 60V 1A SC-62

Part Details for 2SJ360(TE12L,F) by Toshiba America Electronic Components

Results Overview of 2SJ360(TE12L,F) by Toshiba America Electronic Components

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2SJ360(TE12L,F) Information

2SJ360(TE12L,F) by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85

Price & Stock for 2SJ360(TE12L,F)

Part # Distributor Description Stock Price Buy
DISTI # 2SJ360(TE12L,F)
EBV Elektronik Trans MOSFET PCH 60V 1A 4Pin3Tab PWMini TR (Alt: 2SJ360(TE12L,F)) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for 2SJ360(TE12L,F)

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2SJ360(TE12L,F) Part Data Attributes

2SJ360(TE12L,F) Toshiba America Electronic Components
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2SJ360(TE12L,F) Toshiba America Electronic Components MOSFET P-CH 60V 1A SC-62
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code SOT-89
Package Description SMALL OUTLINE, R-PSSO-F3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Surface Mount YES
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

2SJ360(TE12L,F) Related Parts

2SJ360(TE12L,F) Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the 2SJ360 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal design and heat dissipation guidelines, and to derate the device's power handling according to the temperature derating curve provided in the datasheet.

  • The maximum allowable power dissipation for the 2SJ360 is 125W at a case temperature of 25°C. However, this value decreases as the temperature increases, so be sure to consult the datasheet for the derating curve.

  • To protect the 2SJ360 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging and handling materials, and ensure that all personnel handling the device are grounded.

  • The recommended storage condition for the 2SJ360 is in a dry, cool place, away from direct sunlight and moisture. The device should be stored in its original packaging or in a similar ESD-protective package.