Datasheets
2SJ317NYTR by:
Renesas Electronics Corporation
Hitachi Ltd
Renesas Electronics Corporation
Semicon Components Inc
Not Found

2A, 12V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET

Part Details for 2SJ317NYTR by Renesas Electronics Corporation

Results Overview of 2SJ317NYTR by Renesas Electronics Corporation

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2SJ317NYTR Information

2SJ317NYTR by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SJ317NYTR

Part # Distributor Description Stock Price Buy
DISTI # 86083727
Verical Trans MOSFET P-CH Si 12V 2A 4-Pin(3+Tab) UPAK T/R Min Qty: 560 Package Multiple: 1 Date Code: 1501 Americas - 4000
  • 560 $0.6703
  • 1,000 $0.6330
$0.6330 / $0.6703 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 2A, 12V, P-Channel MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 4000
  • 1 $0.5958
  • 25 $0.5839
  • 100 $0.5601
  • 500 $0.5362
  • 1,000 $0.5064
$0.5064 / $0.5958 Buy Now

Part Details for 2SJ317NYTR

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2SJ317NYTR Part Data Attributes

2SJ317NYTR Renesas Electronics Corporation
Buy Now Datasheet
Compare Parts:
2SJ317NYTR Renesas Electronics Corporation 2A, 12V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-F3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SJ317NYTR

This table gives cross-reference parts and alternative options found for 2SJ317NYTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ317NYTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SJ317NY Hitachi Ltd Check for Price Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 2SJ317NYTR vs 2SJ317NY
Part Number Manufacturer Composite Price Description Compare
2SJ317NYTR Hitachi Ltd Check for Price Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 2SJ317NYTR vs 2SJ317NYTR

2SJ317NYTR Related Parts

2SJ317NYTR Frequently Asked Questions (FAQ)

  • Renesas provides a recommended PCB layout for the 2SJ317NYTR in their application note AN14492. It suggests using a thermal pad on the bottom of the package, and connecting it to a large copper area on the PCB to dissipate heat efficiently.

  • To ensure proper biasing during startup, it's recommended to use a soft-start circuit to slowly ramp up the voltage and current to the device. This can be achieved using an external voltage regulator or a dedicated soft-start IC.

  • The maximum allowed power dissipation for the 2SJ317NYTR is dependent on the ambient temperature and the thermal resistance of the PCB. According to the datasheet, the maximum power dissipation is 2.5W at an ambient temperature of 25°C. However, this value can be derated based on the actual operating conditions.

  • Yes, the 2SJ317NYTR is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard for automotive-grade devices, and is also suitable for use in industrial and medical applications that require high reliability.

  • To protect the 2SJ317NYTR from overvoltage and overcurrent conditions, it's recommended to use external protection circuits such as voltage regulators, current limiters, and TVS diodes. These circuits can help prevent damage to the device and ensure reliable operation.