Part Details for 2SD2586 by Toshiba America Electronic Components
Results Overview of 2SD2586 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2SD2586 Information
2SD2586 by Toshiba America Electronic Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SD2586
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER BIPOLAR TRANSISTOR, 5A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN | 83 |
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$3.2500 / $7.5000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for 2SD2586
2SD2586 CAD Models
2SD2586 Part Data Attributes
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2SD2586
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SD2586
Toshiba America Electronic Components
TRANSISTOR 5 A, 600 V, NPN, Si, POWER TRANSISTOR, 2-16E3A, 3 PIN, BIP General Purpose Power
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 5 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 4.4 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 50 W | |
Power Dissipation-Max (Abs) | 50 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 2.5 MHz | |
Turn-off Time-Max (toff) | 10600 ns | |
VCEsat-Max | 5 V |