Datasheets
2SD2586 by:
Toshiba America Electronic Components
Inchange Semiconductor Company Ltd
Toshiba America Electronic Components
Not Found

TRANSISTOR 5 A, 600 V, NPN, Si, POWER TRANSISTOR, 2-16E3A, 3 PIN, BIP General Purpose Power

Part Details for 2SD2586 by Toshiba America Electronic Components

Results Overview of 2SD2586 by Toshiba America Electronic Components

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2SD2586 Information

2SD2586 by Toshiba America Electronic Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SD2586

Part # Distributor Description Stock Price Buy
Quest Components POWER BIPOLAR TRANSISTOR, 5A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN 83
  • 1 $7.5000
  • 6 $3.7500
  • 54 $3.2500
$3.2500 / $7.5000 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 400
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for 2SD2586

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2SD2586 Part Data Attributes

2SD2586 Toshiba America Electronic Components
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2SD2586 Toshiba America Electronic Components TRANSISTOR 5 A, 600 V, NPN, Si, POWER TRANSISTOR, 2-16E3A, 3 PIN, BIP General Purpose Power
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 5 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 4.4
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2.5 MHz
Turn-off Time-Max (toff) 10600 ns
VCEsat-Max 5 V