Datasheets
2SD1803T-TL-E by: onsemi

Bipolar Transistor, (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL

Part Details for 2SD1803T-TL-E by onsemi

Overview of 2SD1803T-TL-E by onsemi

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for 2SD1803T-TL-E

Part # Distributor Description Stock Price Buy
DISTI # 70465735
RS ON Semi 2SD1803T-TL-E NPN Bipolar Transistor, 5 A, 50 V, 3-Pin TP | ON Semiconductor 2SD1803T-TL-E RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.4910
  • 250 $0.4670
  • 1,250 $0.4420
  • 2,500 $0.4180
$0.4180 / $0.4910 RFQ
Rochester Electronics 2SD1803 - Small Signal Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 399
RFQ
Flip Electronics Stock, ship today 600
RFQ

Part Details for 2SD1803T-TL-E

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2SD1803T-TL-E Part Data Attributes

2SD1803T-TL-E onsemi
Buy Now Datasheet
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2SD1803T-TL-E onsemi Bipolar Transistor, (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK / TP-FA
Package Description DPAK-3/2
Pin Count 3
Manufacturer Package Code 369AH
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 60 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE
DC Current Gain-Min (hFE) 35
JESD-30 Code R-PSSO-G2
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 20 W
Surface Mount YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz
VCEsat-Max 0.55 V

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