Part Details for 2SC5849 by Hitachi Ltd
Results Overview of 2SC5849 by Hitachi Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SC5849 Information
2SC5849 by Hitachi Ltd is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SC5849
2SC5849 CAD Models
2SC5849 Part Data Attributes
|
2SC5849
Hitachi Ltd
Buy Now
Datasheet
|
Compare Parts:
2SC5849
Hitachi Ltd
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MFPAK-3
Select a part to compare: |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HITACHI LTD | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.08 A | |
Collector-Base Capacitance-Max | 1.15 pF | |
Collector-Emitter Voltage-Max | 6 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 90 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.08 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 9000 MHz |