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TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SC5200-O by Toshiba America Electronic Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SC5200 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
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Bristol Electronics | 250 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 100 |
|
RFQ | |
|
Vyrian | Transistors | 359 |
|
RFQ | |
|
Win Source Electronics | 51500 |
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$0.8667 / $1.3000 | Buy Now |
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2SC5200-O
Toshiba America Electronic Components
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Datasheet
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2SC5200-O
Toshiba America Electronic Components
TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | 2-21F1A, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Toshiba | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 15 A | |
Collector-Emitter Voltage-Max | 230 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 150 W | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 30 MHz | |
VCEsat-Max | 3 V |