Datasheets
2SC4163M by:
SANYO Semiconductor Co Ltd
Inchange Semiconductor Company Ltd
onsemi
SANYO Electric Co Ltd
SANYO Semiconductor Co Ltd
Not Found

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN

Part Details for 2SC4163M by SANYO Semiconductor Co Ltd

Results Overview of 2SC4163M by SANYO Semiconductor Co Ltd

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Applications Consumer Electronics Audio and Video Systems

2SC4163M Information

2SC4163M by SANYO Semiconductor Co Ltd is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SC4163M

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Bipolar Transistor, 12A, 400V, NPN, TO-220AB, 3 Pin RoHS: Compliant Status: Obsolete Min Qty: 1 50
  • 1 $0.3792
  • 25 $0.3716
  • 100 $0.3564
  • 500 $0.3413
  • 1,000 $0.3223
$0.3223 / $0.3792 Buy Now

Part Details for 2SC4163M

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2SC4163M Part Data Attributes

2SC4163M SANYO Semiconductor Co Ltd
Buy Now Datasheet
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2SC4163M SANYO Semiconductor Co Ltd Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN
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Part Life Cycle Code Transferred
Ihs Manufacturer SANYO SEMICONDUCTOR CO LTD
Part Package Code TO-220AB
Package Description TO-220ML, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 12 A
Collector-Emitter Voltage-Max 400 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz

Alternate Parts for 2SC4163M

This table gives cross-reference parts and alternative options found for 2SC4163M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC4163M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SC4163-M SANYO Semiconductor Co Ltd Check for Price 12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN 2SC4163M vs 2SC4163-M
2SC4163M SANYO Electric Co Ltd Check for Price 12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN 2SC4163M vs 2SC4163M
2SC4163M onsemi Check for Price 12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN 2SC4163M vs 2SC4163M

2SC4163M Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2SC4163M is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum ratings to ensure reliability.

  • To ensure the 2SC4163M is properly biased for linear operation, you should follow the recommended biasing conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, you should ensure that the device is operated within its recommended current and voltage ranges, and that the load impedance is properly matched to the device's output impedance.

  • The recommended PCB layout and thermal management for the 2SC4163M involve using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. You should also minimize the thermal resistance between the device and the heat sink or thermal pad, and use thermal vias to dissipate heat away from the device.

  • To protect the 2SC4163M from electrostatic discharge (ESD), you should follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. You should also ensure that the device is properly grounded during handling and assembly, and use ESD protection devices such as diodes or resistors in the circuit design.

  • The reliability and lifespan of the 2SC4163M depend on various factors, including the operating conditions, storage conditions, and handling practices. According to the datasheet, the device has a typical lifespan of 10 years at a junction temperature of 25°C, but this can be affected by factors such as temperature, humidity, and voltage stress. It's recommended to follow proper storage and handling procedures, and to operate the device within its recommended ratings to ensure maximum reliability.