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Transistors / Small Signal Bipolar Transistors / 2SC1815-GR
Datasheets
2SC1815-GR by:
Toshiba America Electronic Components
Bharat Electronics Ltd
Central Semiconductor Corp
Continental Device India Ltd
Jiangsu Changjiang Electronics Technology Co Ltd
Kuwait Semiconductor Co Ltd
Micro Commercial Components
Micro Electronics Corporation
Secos Corporation
Shanghai Lunsure Electronic Technology Co Ltd
Toshiba America Electronic Components
Unisonic Technologies Co Ltd
Not Found

TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

Part Details for 2SC1815-GR by Toshiba America Electronic Components

Results Overview of 2SC1815-GR by Toshiba America Electronic Components

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Applications Education and Research Industrial Automation Electronic Manufacturing

2SC1815-GR Information

2SC1815-GR by Toshiba America Electronic Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SC1815-GR

Part # Distributor Description Stock Price Buy
Vyrian Transistors 182
RFQ
Win Source Electronics Trans GP BJT NPN 50V 0.15A 3-Pin TO-92 6000
  • 340 $0.1489
  • 820 $0.1222
  • 1,270 $0.1184
  • 1,750 $0.1146
  • 2,260 $0.1108
  • 3,025 $0.0993
$0.0993 / $0.1489 Buy Now

Part Details for 2SC1815-GR

2SC1815-GR CAD Models

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2SC1815-GR Part Data Attributes

Parametric Data
2SC1815-GR Toshiba America Electronic Components
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2SC1815-GR Toshiba America Electronic Components TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description 2-5F1B, SC-43, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Collector Current-Max (IC) 0.15 A
Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE
DC Current Gain-Min (hFE) 200
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.4 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 80 MHz
VCEsat-Max 0.25 V

2SC1815-GR Related Parts

2SC1815-GR Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the 2SC1815-GR is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm x 0.5mm thermal pad.

  • Yes, the 2SC1815-GR can be used in switching applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) to prevent damage. The transistor's switching characteristics, such as rise and fall times, should also be considered.

  • To prevent electrostatic discharge (ESD) damage, it's recommended to handle the 2SC1815-GR with an ESD wrist strap or mat, and to use ESD-protected packaging and storage. Additionally, consider adding ESD protection circuits or devices in the application circuit.

  • The maximum operating temperature range for the 2SC1815-GR is -55°C to 150°C, but the device's performance and reliability may degrade at extreme temperatures. It's essential to consider the application's operating temperature range and ensure the transistor is operated within its recommended specifications.

  • The 2SC1815-GR is suitable for high-frequency applications up to several hundred MHz, but its performance may degrade at very high frequencies due to internal capacitances and inductances. It's essential to consider the transistor's high-frequency characteristics, such as its transition frequency (fT), and ensure it meets the application's requirements.