Datasheets
2SA812-M7 by:
Yangzhou Yangjie Electronics Co Ltd
Jiangsu Changjiang Electronics Technology Co Ltd
Micro Commercial Components
NEC Electronics America Inc
NEC Electronics Group
Rectron Semiconductor
Renesas Electronics Corporation
Transys Electronics Limited
WEITRON INTERNATIONAL CO., LTD.
Yangzhou Yangjie Electronics Co Ltd
Not Found

Small Signal Bipolar Transistor,

Part Details for 2SA812-M7 by Yangzhou Yangjie Electronics Co Ltd

Results Overview of 2SA812-M7 by Yangzhou Yangjie Electronics Co Ltd

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2SA812-M7 Information

2SA812-M7 by Yangzhou Yangjie Electronics Co Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SA812-M7

Part # Distributor Description Stock Price Buy
DISTI # 2SA812-M7-YAN
TME Transistor: PNP, bipolar, 50V, 0.1A, 0.2W, SOT23 Min Qty: 25 0
  • 25 $0.0320
  • 100 $0.0147
  • 500 $0.0132
  • 3,000 $0.0117
  • 15,000 $0.0105
$0.0105 / $0.0320 RFQ

Part Details for 2SA812-M7

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2SA812-M7 Part Data Attributes

2SA812-M7 Yangzhou Yangjie Electronics Co Ltd
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2SA812-M7 Yangzhou Yangjie Electronics Co Ltd Small Signal Bipolar Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 4.5 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE
DC Current Gain-Min (hFE) 300
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 180 MHz
VCEsat-Max 0.3 V

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