There are no models available for this part yet.
Overview of 2SA2012-TD-E by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for 2SA2012-TD-E by onsemi
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
65T2444
|
Newark | Bipolar Transistor -30V -5A Vce(Sat), -210Mv Max. Pnp Single Pcp/Reel Rohs Compliant: Yes |Onsemi 2SA2012-TD-E RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | ||
|
DISTI #
2SA2012-TD-E
|
TME | Transistor: PNP, bipolar, 30V, 5A, 3.5W, SOT89 Min Qty: 3 | 781 |
|
$0.3490 / $0.7560 | Buy Now |
CAD Models for 2SA2012-TD-E by onsemi
Part Data Attributes for 2SA2012-TD-E by onsemi
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
End Of Life
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Part Package Code
|
SOT-89 / PCP-1
|
|
Package Description
|
SC-62, 3 PIN
|
|
Pin Count
|
3
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Manufacturer Package Code
|
419AU
|
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Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
38 Weeks
|
|
Samacsys Manufacturer
|
onsemi
|
|
Case Connection
|
COLLECTOR
|
|
Collector Current-Max (IC)
|
5 A
|
|
Collector-Emitter Voltage-Max
|
30 V
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Configuration
|
SINGLE
|
|
DC Current Gain-Min (hFE)
|
200
|
|
JEDEC-95 Code
|
TO-243
|
|
JESD-30 Code
|
R-PSSO-F3
|
|
JESD-609 Code
|
e6
|
|
Moisture Sensitivity Level
|
1
|
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Number of Elements
|
1
|
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Number of Terminals
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3
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Operating Temperature-Max
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150 °C
|
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Package Body Material
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PLASTIC/EPOXY
|
|
Package Shape
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RECTANGULAR
|
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Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
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Polarity/Channel Type
|
PNP
|
|
Power Dissipation-Max (Abs)
|
3.5 W
|
|
Surface Mount
|
YES
|
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Terminal Finish
|
Tin/Bismuth (Sn/Bi)
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|
Terminal Form
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FLAT
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
|
30
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
|
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Transition Frequency-Nom (fT)
|
350 MHz
|
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