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Power Bipolar Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
264-2SA1943-O(S1F-ND
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DigiKey | PB-F POWER TRANSISTOR TO-3PL PC= Min Qty: 1 Lead time: 12 Weeks Container: Tube |
10 In Stock |
|
$1.2055 / $2.7800 | Buy Now |
DISTI #
2SA1943-O(S1,F
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Avnet Americas | Transistor PNP 230V 3-Pin TO-3P(L) - Rail/Tube (Alt: 2SA1943-O(S1,F) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$1.3935 / $1.7778 | Buy Now |
DISTI #
757-2SA1943-OS1F
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Mouser Electronics | Bipolar Transistors - BJT Pb-F POWER TRANSISTOR TO-3PL PC=150W F=100KHZ RoHS: Compliant | 393 |
|
$1.3200 / $2.8600 | Buy Now |
DISTI #
2SA1943-O(S1,F
|
Avnet Americas | Transistor PNP 230V 3-Pin TO-3P(L) - Rail/Tube (Alt: 2SA1943-O(S1,F) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$1.3935 / $1.7778 | Buy Now |
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|
2SA1943-O(S1,F
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SA1943-O(S1,F
Toshiba America Electronic Components
Power Bipolar Transistor
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Toshiba | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 15 A | |
Collector-Base Capacitance-Max | 360 pF | |
Collector-Emitter Voltage-Max | 230 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-XSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 150 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 30 MHz | |
VCEsat-Max | 3 V |