Datasheets
2SA1941-R(Q) by: Toshiba America Electronic Components

TRANSISTOR,BJT,PNP,140V V(BR)CEO,10A I(C),TO-247VAR

Part Details for 2SA1941-R(Q) by Toshiba America Electronic Components

Results Overview of 2SA1941-R(Q) by Toshiba America Electronic Components

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2SA1941-R(Q) Information

2SA1941-R(Q) by Toshiba America Electronic Components is an Other Transistor.
Other Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
2SA1941 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N)

Price & Stock for 2SA1941-R(Q)

Part # Distributor Description Stock Price Buy
DISTI # 64957131
Verical 2SA1941-R(Q) Min Qty: 94 Package Multiple: 1 Date Code: 1701 Americas - 101
  • 94 $0.9162
  • 100 $0.8753
$0.8753 / $0.9162 Buy Now
Quest Components   80
  • 1 $2.1280
  • 17 $1.3300
  • 57 $1.1704
$1.1704 / $2.1280 Buy Now
Vyrian Transistors 128
RFQ

Part Details for 2SA1941-R(Q)

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2SA1941-R(Q) Part Data Attributes

2SA1941-R(Q) Toshiba America Electronic Components
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2SA1941-R(Q) Toshiba America Electronic Components TRANSISTOR,BJT,PNP,140V V(BR)CEO,10A I(C),TO-247VAR
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Configuration SINGLE
DC Current Gain-Min (hFE) 55
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 100 W
Surface Mount NO

2SA1941-R(Q) Related Parts

2SA1941-R(Q) Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the 2SA1941-R(Q) transistor is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. The recommended land pattern is available in the Toshiba datasheet or can be found in IPC-7351 standards.

  • To ensure reliability in high-temperature applications, it is recommended to follow proper derating guidelines for the transistor's power dissipation, voltage, and current ratings. Additionally, consider using a heat sink or thermal management system to keep the transistor's junction temperature below 150°C.

  • While the 2SA1941-R(Q) transistor is primarily designed for linear amplifier applications, it can be used in switching applications with proper design considerations. However, the transistor's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching applications.

  • To protect the 2SA1941-R(Q) transistor from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection circuits, such as TVS diodes or resistors, in the design to prevent ESD damage.

  • The recommended storage condition for the 2SA1941-R(Q) transistor is in a dry, cool place with a temperature range of -40°C to 30°C and relative humidity below 60%. Avoid storing the transistors in direct sunlight or near sources of moisture.