Part Details for 2SA1182-Y(TE85L,F) by Toshiba America Electronic Components
Overview of 2SA1182-Y(TE85L,F) by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2SA1182-Y(TE85L,F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
C1S751200942752
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Chip1Stop | Trans GP BJT PNP 30V 0.5A 3-Pin S-Mini T/R RoHS: Compliant pbFree: Yes | 8400 |
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$0.1950 / $0.2550 | Buy Now |
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DISTI #
2SA1182-Y(TE85L,F)
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EBV Elektronik | (Alt: 2SA1182-Y(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for 2SA1182-Y(TE85L,F)
2SA1182-Y(TE85L,F) CAD Models
2SA1182-Y(TE85L,F) Part Data Attributes
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2SA1182-Y(TE85L,F)
Toshiba America Electronic Components
Buy Now
Datasheet
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2SA1182-Y(TE85L,F)
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SC-59, TO-236MOD, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Base Capacitance-Max | 13 pF | |
| Collector-Emitter Voltage-Max | 30 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| VCEsat-Max | 0.25 V |