Part Details for 2N7316H by Harris Semiconductor
Overview of 2N7316H by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N7316H
2N7316H CAD Models
2N7316H Part Data Attributes
|
2N7316H
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
2N7316H
Harris Semiconductor
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | RADIATION HARDENED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 364 ns | |
Turn-on Time-Max (ton) | 400 ns |
Alternate Parts for 2N7316H
This table gives cross-reference parts and alternative options found for 2N7316H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7316H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FRM9140H3 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N7316H vs FRM9140H3 |
FRM9140H4 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N7316H vs FRM9140H4 |
FRM9140H4 | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | 2N7316H vs FRM9140H4 |
2N7316H | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N7316H vs 2N7316H |
FRM9140H1 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N7316H vs FRM9140H1 |