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Small Signal Field-Effect Transistor,
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2N7002W
Galaxy Semi-Conductor Co Ltd
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Datasheet
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2N7002W
Galaxy Semi-Conductor Co Ltd
Small Signal Field-Effect Transistor,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Galaxy | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7002W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7002 | Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.2W; V(BR)DSS Min (V): 60V; ID Max (A): 0.115A; RDS(ON) Max (Ω): 7.5 Ohm; ID (A): 0.5A; VGS (V): 10V; ID (mA): 250mA; GFS Min (S): 0.08 S; VDS (V): 10V; ID (A) 1: 0.2A; Package: SOT-23 | Galaxy Microelectronics | 2N7002W vs 2N7002 |
2N7002T | Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.15W; V(BR)DSS Min (V): 60V; ID Max (A): 0.115A; RDS(ON) Max (Ω): 7.5 Ohm; ID (A): 0.05A; VGS (V): 5V; ID (mA): 250mA; GFS Min (S): 0.08 S; VDS (V): 10V; ID (A) 1: 0.2A; Package: SOT-523 | Galaxy Microelectronics | 2N7002W vs 2N7002T |
2N7002W | Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.2W; V(BR)DSS Min (V): 60V; ID Max (A): 0.115A; RDS(ON) Max (Ω): 7.5 Ohm; ID (A): 0.05A; VGS (V): 5V; ID (mA): 250mA; GFS Min (S): 0.08 S; VDS (V): 10V; ID (A) 1: 0.2A; Package: SOT-323 | Galaxy Microelectronics | 2N7002W vs 2N7002W |