Part Details for 2N7002K by Vishay Siliconix
Results Overview of 2N7002K by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002K Information
2N7002K by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002K
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 549913 |
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RFQ |
Part Details for 2N7002K
2N7002K CAD Models
2N7002K Part Data Attributes
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2N7002K
Vishay Siliconix
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Datasheet
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2N7002K
Vishay Siliconix
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | SOT-23 | |
| Package Description | SOT-23, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002K
This table gives cross-reference parts and alternative options found for 2N7002K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002K | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | 2N7002K vs 2N7002K |
| 2N7002KHE3-TP | Micro Commercial Components | Check for Price | Small Signal Field-Effect Transistor, 0.34A I(D), 60V, | 2N7002K vs 2N7002KHE3-TP |
| 2N7002KT1H | onsemi | Check for Price | 320mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002K vs 2N7002KT1H |
| 2N7002KQ-7 | Diodes Incorporated | $0.0335 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002K vs 2N7002KQ-7 |
| 2N7002KC | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Small Signal Field-Effect Transistor, | 2N7002K vs 2N7002KC |
| 2N7002K_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N7002K vs 2N7002K_R2_00001 |
| 2N7002K-T1 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N7002K vs 2N7002K-T1 |
| 2N7002K | Rectron Semiconductor | Check for Price | Small Signal Field-Effect Transistor | 2N7002K vs 2N7002K |
| 2N7002K_R1_00501 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, | 2N7002K vs 2N7002K_R1_00501 |
2N7002K Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002K is -55°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power dissipation and voltage ratings at higher temperatures to ensure reliable operation.
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While the 2N7002K can be used as a switch, it's not ideal for high-frequency signals due to its relatively high capacitance and inductance. The device's transition frequency (ft) is around 1.5 GHz, which may not be sufficient for high-frequency applications. Consider using a dedicated high-frequency switch or a different device with better high-frequency performance.
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To ensure the 2N7002K is fully turned on or off, you should provide a sufficient gate-source voltage (Vgs) and current. A Vgs of at least 4.5V is recommended for full enhancement, and a gate current of around 1-2 mA is typical. Additionally, consider using a gate driver or a voltage translator to ensure a clean and stable gate signal.
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The maximum continuous drain current (Id) for the 2N7002K is 500 mA, as specified in the datasheet. However, this rating is dependent on the device's junction temperature and the PCB's thermal design. Be sure to check the device's power dissipation and thermal resistance to ensure reliable operation.
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While the 2N7002K can be used in linear amplifier circuits, it's not the most suitable device for this application. The device's relatively high drain-source resistance (Rds(on)) and limited transconductance (gm) may result in poor amplifier performance. Consider using a dedicated linear amplifier transistor or a device with better linear characteristics.