Part Details for 2N7002CK,215 by NXP Semiconductors
Overview of 2N7002CK,215 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for 2N7002CK,215
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 350 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 280 |
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$1.0000 / $2.5000 | Buy Now |
Part Details for 2N7002CK,215
2N7002CK,215 CAD Models
2N7002CK,215 Part Data Attributes:
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2N7002CK,215
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002CK,215
NXP Semiconductors
2N7002CK - 60 V, 0.3 A N-channel Trench MOSFET TO-236 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-236 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7.5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |