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Transistors / Small Signal Field-Effect Transistors / 2N7000BU
Datasheets
2N7000BU by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N7000BU by onsemi

Results Overview of 2N7000BU by onsemi

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2N7000BU Information

2N7000BU by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7000BU

Part # Distributor Description Stock Price Buy
DISTI # 31Y5850
Newark Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Contin... uous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.9V, Msl:- Rohs Compliant: Yes |Onsemi 2N7000BU more RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk 7258
  • 1 $0.4300
  • 10 $0.2820
  • 100 $0.1730
  • 500 $0.1600
  • 1,000 $0.1460
  • 2,500 $0.1390
  • 10,000 $0.1310
$0.1310 / $0.4300 Buy Now
DISTI # 26AC6372
Newark Fet 60V 5.0 Ohm To92 Rohs Compliant: Yes |Onsemi 2N7000BU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $0.3910
  • 10 $0.3030
  • 100 $0.1880
  • 500 $0.1750
  • 1,000 $0.1240
  • 2,500 $0.1160
  • 10,000 $0.1010
$0.1010 / $0.3910 Buy Now
DISTI # 2N7000BU-ND
DigiKey MOSFET N-CH 60V 200MA TO92-3 Min Qty: 1 Lead time: 9 Weeks Container: Bulk 23461
In Stock
  • 1 $0.3800
  • 10 $0.2330
  • 100 $0.1255
  • 500 $0.1198
  • 1,000 $0.1047
  • 2,000 $0.0999
  • 5,000 $0.0909
  • 10,000 $0.0861
  • 50,000 $0.0763
$0.0763 / $0.3800 Buy Now
DISTI # 2N7000BU
Avnet Americas Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk - Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days Container: Bulk 9850
  • 1 $0.0746
  • 10 $0.0696
  • 30 $0.0684
  • 50 $0.0672
  • 100 $0.0660
$0.0660 / $0.0746 Buy Now
DISTI # 2N7000BU
Avnet Americas Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk - Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 40 Weeks, 0 Days Container: Bulk 9000
RFQ
DISTI # 2N7000BU
Avnet Americas Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk - Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 8197 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Bulk 13339 Partner Stock
  • 1 $0.0814
$0.0814 Buy Now
DISTI # 512-2N7000BU
Mouser Electronics MOSFETs 60V N-Channel Sm Sig RoHS: Compliant 20725
  • 1 $0.3700
  • 10 $0.2280
  • 100 $0.1230
  • 1,000 $0.0970
  • 2,500 $0.0900
  • 10,000 $0.0820
  • 30,000 $0.0790
  • 50,000 $0.0760
  • 100,000 $0.0750
$0.0750 / $0.3700 Buy Now
Future Electronics N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92 RoHS: Compliant pbFree: Yes Min Qty: 20000 Package Multiple: 10000 Lead time: 27 Weeks Container: Bag 0
Bag
  • 1,000 $0.0787
  • 3,000 $0.0765
  • 5,000 $0.0755
  • 10,000 $0.0742
  • 20,000 $0.0722
$0.0722 / $0.0787 Buy Now
Future Electronics N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92 RoHS: Compliant pbFree: Yes Min Qty: 20000 Package Multiple: 10000 Lead time: 27 Weeks Container: Bag 0
Bag
  • 1,000 $0.0787
  • 3,000 $0.0765
  • 5,000 $0.0755
  • 10,000 $0.0742
  • 20,000 $0.0722
$0.0722 / $0.0787 Buy Now
Onlinecomponents.com N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92 RoHS: Compliant 10000 In Stock
  • 250 $0.1416
  • 2,500 $0.0990
  • 5,000 $0.0891
  • 7,500 $0.0863
  • 30,000 $0.0840
  • 50,000 $0.0744
  • 100,000 $0.0740
  • 150,000 $0.0737
$0.0737 / $0.1416 Buy Now
Bristol Electronics   29
RFQ
Rochester Electronics Small Signal Field-Effect Transistor, 0.2A, 60V, N-Channel, MOSFET, TO-92 RoHS: Compliant Status: Active Min Qty: 1 34978
  • 1 $0.0844
  • 25 $0.0827
  • 100 $0.0793
  • 500 $0.0760
  • 1,000 $0.0717
$0.0717 / $0.0844 Buy Now
DISTI # 2N7000BU
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 10000 0
  • 10,000 $0.0800
$0.0800 Buy Now
DISTI # 2N7000BU
Avnet Silica Transistor MOSFET NCH 60V 02A 3Pin TO92 Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 2N7000BU
EBV Elektronik Transistor MOSFET NCH 60V 02A 3Pin TO92 Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 13339
RFQ
Master Electronics N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92 RoHS: Compliant 10000 In Stock
  • 250 $0.1416
  • 2,500 $0.0990
  • 5,000 $0.0891
  • 7,500 $0.0863
  • 30,000 $0.0840
  • 50,000 $0.0744
  • 100,000 $0.0740
  • 150,000 $0.0737
$0.0737 / $0.1416 Buy Now

Part Details for 2N7000BU

2N7000BU CAD Models

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2N7000BU Part Data Attributes

Parametric Data
2N7000BU onsemi
Buy Now Datasheet
Compare Parts:
2N7000BU onsemi Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 0.2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.4 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed

2N7000BU Related Parts

2N7000BU Frequently Asked Questions (FAQ)

  • The 2N7000BU is a low-power, low-voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.

  • To ensure the 2N7000BU is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be sufficient to charge the gate capacitance quickly.

  • The thermal resistance of the 2N7000BU is not explicitly stated in the datasheet. However, the thermal resistance of a similar package (SOT-23) is typically around 200-250°C/W. It's essential to consider thermal management when designing with the 2N7000BU.

  • While the 2N7000BU can be used as a switch, it's not suitable for high-current applications due to its limited current rating (maximum continuous drain current is 115mA). For high-current applications, consider using a MOSFET with a higher current rating.

  • To protect the 2N7000BU from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits or devices in your design to prevent damage from static electricity.