Datasheets
2N6802 by:
Vishay Siliconix
Defense Logistics Agency
Fairchild Semiconductor Corporation
Freescale Semiconductor
Harris Semiconductor
Hitano Enterprise Corp
Infineon Technologies AG
International Rectifier
Intersil Corporation
Microsemi Corporation
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
Omnirel Corp
Semicoa Semiconductors
Susumu Co Ltd
Thin Film Technology Corp (TFT)
Thomson Consumer Electronics
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Unitrode Corporation
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,

Part Details for 2N6802 by Vishay Siliconix

Results Overview of 2N6802 by Vishay Siliconix

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2N6802 Information

2N6802 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6802

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2N6802 Part Data Attributes

2N6802 Vishay Siliconix
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2N6802 Vishay Siliconix Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,
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Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code unknown
Configuration SINGLE
Drain Current-Max (ID) 3.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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