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Transistors / Power Field-Effect Transistors / 2N6788
Datasheets
2N6788 by:
Harris Semiconductor
Defense Logistics Agency
Fairchild Semiconductor Corporation
Freescale Semiconductor
General Electric Solid State
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
RCA
Rochester Electronics LLC
Semicoa Semiconductors
Thomson Consumer Electronics
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Unitrode Corporation
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for 2N6788 by Harris Semiconductor

Results Overview of 2N6788 by Harris Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

2N6788 Information

2N6788 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6788

2N6788 CAD Models

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2N6788 Part Data Attributes

Parametric Data
2N6788 Harris Semiconductor
Buy Now Datasheet
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2N6788 Harris Semiconductor Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature RADIATION HARDENED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 110 ns

Alternate Parts for 2N6788

This table gives cross-reference parts and alternative options found for 2N6788. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6788, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N6788 TT Electronics Power and Hybrid / Semelab Limited Check for Price 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs 2N6788
IRFF120 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 2N6788 vs IRFF120
2N6788.MOD TT Electronics Power and Hybrid / Semelab Limited Check for Price 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs 2N6788.MOD
2N6788 Vishay Siliconix Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, 2N6788 vs 2N6788
IRFF120PBF International Rectifier Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 2N6788 vs IRFF120PBF
IRFF120 Motorola Mobility LLC Check for Price 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 2N6788 vs IRFF120
JANTX2N6788 Harris Semiconductor Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 2N6788 vs JANTX2N6788
JANTX2N6788 Semicoa Semiconductors Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs JANTX2N6788
JANTXV2N6788 Semicoa Semiconductors Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs JANTXV2N6788
Part Number Manufacturer Composite Price Description Compare
IRFF120 TT Electronics Power and Hybrid / Semelab Limited Check for Price 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs IRFF120
IRFF133 Intersil Corporation Check for Price 7A, 80V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6788 vs IRFF133
JANTX2N6788 Intersil Corporation Check for Price 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6788 vs JANTX2N6788
IRFF132 Harris Semiconductor Check for Price Power Field-Effect Transistor, 7A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 2N6788 vs IRFF132
IRFF132 Intersil Corporation Check for Price 7A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6788 vs IRFF132
2N6788 Unitrode Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6788 vs 2N6788
2N6788.MODR1 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6788 vs 2N6788.MODR1
IRFF123 Harris Semiconductor Check for Price Power Field-Effect Transistor, 5A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 2N6788 vs IRFF123
2N6796 International Rectifier Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN 2N6788 vs 2N6796
JANS2N6788 Microsemi Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, 2N6788 vs JANS2N6788

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