Datasheets
2N6766 by:
Omnirel Corp
Defense Logistics Agency
Fairchild Semiconductor Corporation
Freescale Semiconductor
General Electric Solid State
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
IXYS Corporation
Littelfuse Inc
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
Omnirel Corp
Rochester Electronics LLC
Solid State Devices Inc (SSDI)
Thomson Consumer Electronics
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Unitrode Corporation
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN

Part Details for 2N6766 by Omnirel Corp

Results Overview of 2N6766 by Omnirel Corp

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Applications Telecommunications

2N6766 Information

2N6766 by Omnirel Corp is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6766

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2N6766 Part Data Attributes

2N6766 Omnirel Corp
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2N6766 Omnirel Corp Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer OMNIREL CORP
Package Description HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 60 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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