Datasheets
2N6756 by:
IXYS Corporation
Defense Logistics Agency
Fairchild Semiconductor Corporation
Freescale Semiconductor
General Electric Solid State
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
IXYS Corporation
Littelfuse Inc
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
National Semiconductor Corporation
New England Semiconductor
New Jersey Semiconductor Products Inc
Rochester Electronics LLC
Thomson Consumer Electronics
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Unitrode Corporation
Vishay Siliconix
Not Found

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N6756 by IXYS Corporation

Results Overview of 2N6756 by IXYS Corporation

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Applications Industrial Automation Motor control systems

2N6756 Information

2N6756 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6756

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2N6756 Part Data Attributes

2N6756 IXYS Corporation
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2N6756 IXYS Corporation Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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