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10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
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2N6667G
onsemi
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2N6667G
onsemi
10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220 3 LEAD STANDARD | |
Package Description | LEAD FREE, CASE 221A-09, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 221A | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N6667G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6667G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6667 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN | International Devices Inc | 2N6667G vs 2N6667 |
2N6667 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Central Semiconductor Corp | 2N6667G vs 2N6667 |
2N6667 | 10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | 2N6667G vs 2N6667 |
2N6667 | Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Advanced Semiconductor Inc | 2N6667G vs 2N6667 |
2N6667 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin, | Microsemi Corporation | 2N6667G vs 2N6667 |
2N6667 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN | General Transistor Corp | 2N6667G vs 2N6667 |