Datasheets
2N6667G by: onsemi

10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE

Part Details for 2N6667G by onsemi

Overview of 2N6667G by onsemi

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Price & Stock for 2N6667G

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Part Details for 2N6667G

2N6667G CAD Models

2N6667G Part Data Attributes

2N6667G onsemi
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2N6667G onsemi 10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220 3 LEAD STANDARD
Package Description LEAD FREE, CASE 221A-09, 3 PIN
Pin Count 3
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 2N6667G

This table gives cross-reference parts and alternative options found for 2N6667G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6667G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN International Devices Inc 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Central Semiconductor Corp 2N6667G vs 2N6667
2N6667 10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE onsemi 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Advanced Semiconductor Inc 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin, Microsemi Corporation 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN General Transistor Corp 2N6667G vs 2N6667
Part Number Description Manufacturer Compare
2N6667 10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE onsemi 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN International Devices Inc 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Advanced Semiconductor Inc 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin, Microsemi Corporation 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Central Semiconductor Corp 2N6667G vs 2N6667
2N6667 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN General Transistor Corp 2N6667G vs 2N6667

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