Part Details for 2N6426 by Motorola Semiconductor Products
Results Overview of 2N6426 by Motorola Semiconductor Products
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
2N6426 Information
2N6426 by Motorola Semiconductor Products is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6426
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1784 |
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RFQ |
Part Details for 2N6426
2N6426 CAD Models
2N6426 Part Data Attributes
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2N6426
Motorola Semiconductor Products
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Datasheet
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2N6426
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-226AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | TO-226AA, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Base Capacitance-Max | 7 pF | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | DARLINGTON | |
| DC Current Gain-Min (hFE) | 20000 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.5 W | |
| Power Dissipation-Max (Abs) | 0.625 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 125 MHz | |
| VCEsat-Max | 1.5 V |