Datasheets
2N6297 by:
Microchip Technology Inc
Central Semiconductor Corp
Crimson Semiconductor Inc
Digitron Semiconductors
Freescale Semiconductor
Inchange Semiconductor Company Ltd
Microchip Technology Inc
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
New England Semiconductor
New Jersey Semiconductor Products Inc
Semiconductor Technology Inc
Silicon Transistor Corporation
Solid State Devices Inc (SSDI)
Space Power Electronics Inc
Swampscott Electronics Co Inc
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Not Found

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin

Part Details for 2N6297 by Microchip Technology Inc

Results Overview of 2N6297 by Microchip Technology Inc

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Applications Consumer Electronics Audio and Video Systems

2N6297 Information

2N6297 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N6297

Part # Distributor Description Stock Price Buy
DISTI # 33AJ0874
Newark Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N6297 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $26.6400
  • 500 $25.6100
$25.6100 / $26.6400 Buy Now
DISTI # 2N6297-ND
DigiKey PNP TRANSISTOR Min Qty: 100 Lead time: 36 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $26.6402
$26.6402 Buy Now
DISTI # 2N6297
Avnet Americas Trans GP BJT PNP 80V 4A 2-Pin TO-66 - Bulk (Alt: 2N6297) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk 0
  • 100 $25.7843
  • 110 $25.3747
  • 210 $24.9651
  • 500 $24.5555
  • 1,000 $24.1459
$24.1459 / $25.7843 Buy Now
DISTI # 494-2N6297
Mouser Electronics Darlington Transistors Power BJT RoHS: Not Compliant 80
  • 1 $26.5900
  • 250 $25.9500
$25.9500 / $26.5900 Buy Now
DISTI # VBF:5286_09127725
Arrow Electronics Trans Darlington PNP 80V 4A 50000mW 3-Pin(2+Tab) TO-66 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2214 Americas - 20
  • 1 $25.6600
$25.6600 Buy Now
DISTI # 2N6297
Microchip Technology Inc Power BJT _ TO-66, Projected EOL: 2049-02-05 Lead time: 36 Weeks, 0 Days 0

Alternates Available
  • 1 $28.6800
$28.6800 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 1 $30.1200
  • 5 $27.6800
  • 10 $27.2600
  • 25 $26.2600
  • 50 $25.2800
  • 100 $24.9000
  • 250 $24.5300
$24.5300 / $30.1200 Buy Now
NAC Power BJT RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tray 0
  • 1 $29.2600
  • 100 $26.9500
  • 500 $25.6000
  • 800 $24.9800
$24.9800 / $29.2600 Buy Now
Master Electronics   RoHS: Compliant 0
  • 1 $30.1200
  • 5 $27.6800
  • 10 $27.2600
  • 25 $26.2600
  • 50 $25.2800
  • 100 $24.9000
  • 250 $24.5300
$24.5300 / $30.1200 Buy Now

Part Details for 2N6297

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2N6297 Part Data Attributes

2N6297 Microchip Technology Inc
Buy Now Datasheet
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2N6297 Microchip Technology Inc Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin
Select a part to compare:
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 36 Weeks
Case Connection COLLECTOR
Collector Current-Max (IC) 4 A
Collector-Base Capacitance-Max 200 pF
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-66
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 50 W
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
VCEsat-Max 3 V

2N6297 Related Parts

2N6297 Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the 2N6297 is 4.5V to 18V, although it can tolerate up to 20V for short periods.

  • To ensure linear operation, the 2N6297 requires a minimum of 2V between the base and emitter (Vbe) and a minimum of 1V between the collector and emitter (Vce).

  • The 2N6297 can handle a maximum continuous collector current of 1A, and a peak current of 2A for short periods.

  • To prevent overheating, ensure the 2N6297 is mounted on a suitable heat sink, and the ambient temperature does not exceed 150°C. Also, avoid exceeding the maximum power dissipation of 1.5W.

  • Yes, the 2N6297 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). A dedicated switch transistor like the 2N3904 or 2N4401 would be a better choice.