Datasheets
2N6255 by:
Advanced Power Technology
Advanced Power Technology
ECS
Microsemi Corporation
Not Found

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, M246, 3 PIN

Part Details for 2N6255 by Advanced Power Technology

Results Overview of 2N6255 by Advanced Power Technology

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2N6255 Information

2N6255 by Advanced Power Technology is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6255

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2N6255 Part Data Attributes

2N6255 Advanced Power Technology
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2N6255 Advanced Power Technology RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, M246, 3 PIN
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Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 20 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON