Datasheets
2N6212 by:
Central Semiconductor Corp
Alpha Industries
Boca Semiconductor Inc
Central Semiconductor Corp
Crimson Semiconductor Inc
Defense Logistics Agency
Digitron Semiconductors
ECS
Freescale Semiconductor
General Electric Solid State
General Transistor Corp
Harris Semiconductor
Intersil Corporation
Microchip Technology Inc
Microsemi Corporation
Mospec Semiconductor Corp
Motorola Mobility LLC
Motorola Semiconductor Products
New England Semiconductor
New Jersey Semiconductor Products Inc
RCA
Rochester Electronics LLC
Semiconductor Technology Inc
Semitronics Corp
Silicon Transistor Corporation
Skyworks Solutions Inc
Space Power Electronics Inc
Spectrum Control
Swampscott Electronics Co Inc
Thomson Consumer Electronics
Transistor & Electronic Co
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
VPT Components
Not Found

Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

Part Details for 2N6212 by Central Semiconductor Corp

Results Overview of 2N6212 by Central Semiconductor Corp

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Applications Consumer Electronics Audio and Video Systems

2N6212 Information

2N6212 by Central Semiconductor Corp is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6212

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2N6212 Part Data Attributes

2N6212 Central Semiconductor Corp
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2N6212 Central Semiconductor Corp Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Part Package Code TO-66
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 2 A
Collector-Base Capacitance-Max 220 pF
Collector-Emitter Voltage-Max 300 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Fall Time-Max (tf) 600 ns
JEDEC-95 Code TO-66
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 35 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz
Turn-off Time-Max (toff) 3100 ns
VCEsat-Max 1.6 V

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