Part Details for 2N5945 by Advanced Semiconductor Inc
Overview of 2N5945 by Advanced Semiconductor Inc
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- Part Data Attributes: (Available)
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Part Details for 2N5945
2N5945 CAD Models
2N5945 Part Data Attributes:
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2N5945
Advanced Semiconductor Inc
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Datasheet
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2N5945
Advanced Semiconductor Inc
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.8 A | |
Collector-Base Capacitance-Max | 25 pF | |
Collector-Emitter Voltage-Max | 16 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 20 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRPM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |