2N5931
Description: Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

Overview of 2N5931 by New England Semiconductor

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation

CAD Models for 2N5931 by New England Semiconductor
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Part Data Attributes for 2N5931 by New England Semiconductor

2N5931
New England Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
COLLECTOR
Collector Current-Max (IC)
30 A
Collector-Emitter Voltage-Max
160 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
20
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
200 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
175 W
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
30 MHz
Turn-off Time-Max (toff)
800 ns
Turn-on Time-Max (ton)
500 ns
VCEsat-Max
2 V
Want to compare parts?
  1. 2N5931
    New England Semiconductor
    Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
    VS

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