Part Details for 2N5885 by Motorola Semiconductor Products
Overview of 2N5885 by Motorola Semiconductor Products
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2N5885
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-3 | 44 |
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$2.9250 / $5.8500 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-3 | 1 |
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$4.9000 / $7.3500 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-3 | 24 |
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$11.1000 / $13.5000 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 2 |
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$5.0000 / $7.6900 | Buy Now |
Part Details for 2N5885
2N5885 CAD Models
2N5885 Part Data Attributes:
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2N5885
Motorola Semiconductor Products
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Datasheet
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2N5885
Motorola Semiconductor Products
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 25 A | |
Collector-Base Capacitance-Max | 500 pF | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 4 | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 200 W | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz | |
Turn-off Time-Max (toff) | 1800 ns | |
VCEsat-Max | 4 V |