Datasheets
2N5854 by:
Solitron Devices Inc
Boca Semiconductor Inc
Microchip Technology Inc
Microsemi Corporation
Semicoa Semiconductors
Silicon Transistor Corporation
Solitron Devices Inc
Spectrum Control
Square D by Schneider Electric
Not Found

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-61/I, 3 PIN

Part Details for 2N5854 by Solitron Devices Inc

Results Overview of 2N5854 by Solitron Devices Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

2N5854 Information

2N5854 by Solitron Devices Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N5854

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2N5854 Part Data Attributes

2N5854 Solitron Devices Inc
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2N5854 Solitron Devices Inc Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-61/I, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SOLITRON DEVICES INC
Part Package Code TO-61
Package Description TO-61/I, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code O-MUPM-D3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style POST/STUD MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 66 W
Power Dissipation-Max (Abs) 66 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz
VCEsat-Max 0.9 V

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