Datasheets
2N5551RLRA by:
onsemi
Freescale Semiconductor
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Rochester Electronics LLC
Not Found

600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

Part Details for 2N5551RLRA by onsemi

Results Overview of 2N5551RLRA by onsemi

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Applications Consumer Electronics Audio and Video Systems

2N5551RLRA Information

2N5551RLRA by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N5551RLRA

Part # Distributor Description Stock Price Buy
Rochester Electronics Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92 RoHS: Not Compliant Status: Obsolete Min Qty: 1 3636
  • 1 $0.0433
  • 25 $0.0424
  • 100 $0.0407
  • 500 $0.0390
  • 1,000 $0.0368
$0.0368 / $0.0433 Buy Now

Part Details for 2N5551RLRA

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2N5551RLRA Part Data Attributes

2N5551RLRA onsemi
Buy Now Datasheet
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2N5551RLRA onsemi 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-92
Package Description CASE 29-11, TO-226AA, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 29-11
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for 2N5551RLRA

This table gives cross-reference parts and alternative options found for 2N5551RLRA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5551RLRA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N5551 Surge Components Inc Check for Price Small Signal Bipolar Transistor, TO-92, 2N5551RLRA vs 2N5551
2N5551 NXP Semiconductors Check for Price TRANSISTOR 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN, BIP General Purpose Small Signal 2N5551RLRA vs 2N5551
2N5551RLRM onsemi Check for Price 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN 2N5551RLRA vs 2N5551RLRM
2N5551L34Z Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 2N5551RLRA vs 2N5551L34Z
2N5551TA onsemi $0.1029 Small Signal NPN Bipolar Transistor, TO-92-3 LF, 2000-FNFLD 2N5551RLRA vs 2N5551TA
2N5551ZL1 onsemi Check for Price 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 2N5551RLRA vs 2N5551ZL1
2N5551,116 NXP Semiconductors Check for Price 2N5551 2N5551RLRA vs 2N5551,116
2N5551TF Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 2N5551RLRA vs 2N5551TF
2N5551 ROHM Semiconductor Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 2N5551RLRA vs 2N5551
Part Number Manufacturer Composite Price Description Compare
2N5551 Texas Instruments Check for Price 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 2N5551RLRA vs 2N5551
2N5551D27Z Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 2N5551RLRA vs 2N5551D27Z
PMBT5551T/R Nexperia Check for Price Small Signal Bipolar Transistor 2N5551RLRA vs PMBT5551T/R
2N5551-T/R NXP Semiconductors Check for Price 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN 2N5551RLRA vs 2N5551-T/R
2N5551 Thales Group Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN 2N5551RLRA vs 2N5551
2N5551BU Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 2N5551RLRA vs 2N5551BU
933821840235 Nexperia Check for Price Small Signal Bipolar Transistor 2N5551RLRA vs 933821840235
MMBT5551 EDI Diodes (Electronic Devices Inc) Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, NPN, Silicon, SOT-23, 3 PIN 2N5551RLRA vs MMBT5551
MMBT5551-7-F Diodes Incorporated $0.0386 Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, PLASTIC PACKAGE-3 2N5551RLRA vs MMBT5551-7-F
2N5551RL1 Motorola Semiconductor Products Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 2N5551RLRA vs 2N5551RL1

2N5551RLRA Related Parts

2N5551RLRA Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the 2N5551RLRA is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. A recommended land pattern can be found in the onsemi packaging documentation.

  • To ensure reliable operation of the 2N5551RLRA in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and minimizing power dissipation. Additionally, the device should be operated within its recommended temperature range of -55°C to 150°C.

  • The maximum safe operating area (SOA) for the 2N5551RLRA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA can be approximated by the device's maximum power dissipation (PD) and maximum junction temperature (TJ). For the 2N5551RLRA, PD = 625 mW and TJ = 150°C.

  • While the 2N5551RLRA can be used as a switch, it is not recommended for high-frequency applications due to its relatively high transition frequency (ft) of 100 MHz. For high-frequency switching applications, a transistor with a higher ft and lower capacitance is recommended.

  • The 2N5551RLRA has a human body model (HBM) ESD rating of 2 kV and a machine model (MM) ESD rating of 200 V. To ensure ESD protection, it is recommended to follow proper handling and storage procedures, such as using ESD-safe materials, grounding personnel, and using ESD protection devices such as TVS diodes or ESD arrays.